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Xiaoan Fu, PhD

Assistant Professor of Chemical EngineeringFu,Sean

Voice - (502)852-6349
Fax - (502)852-6355
Email - xiaoan.fu (@) 


B.S. Chemical Engineering – Nanchang University, P.R. China - 1986 
M.S. Chemical Engineering –Institute of Process Engineering, Chinese Academy of Sciences - 1989 
Ph.D. Chemical Engineering – Case Western Reserve University - 2001


  • Visiting Scholarship Award, Chinese Academy of Sciences (CAS) -1996 
  •  Young Researcher Award, Institute of Photographic Chemistry, CAS -1993 


  • American Institute of Chemical Engineers (AICHE) 
  • American Chemical Society (ACS)
  • Materials Research Society (MRS) PRINCIPAL 


  • X. A. Fu , A. C. Patil, M. Mehregany, S. Garverick “6H SiC lateral JFETs for analog integrated circuits”, Materials Science Forum, Vol.600, pp1099-1102, 2009. 
  • X. A. Fu , S. Noh, L. Chen, M. Mehregany, “Very thin poly-SiC films for micro/nano devices,” J. Nanoscience and Nanotechology, vol. 8, 3063-3067, 2008.
  • S. Noh, X. A. Fu , L Chen, M. Mehregany, “A study of electrical properties and microstructure of nitrogen-doped poly-SiC films deposited by LPCVD,” Sensors and Actuators A-Physical, vol. 136, 613-617, 2007. 
  • A. C. Patil, X. A. Fu , C. Anupongongarch, M. Mehregany, S. Garverick “Characterization silicon carbide differential amplifiers at high temperature”, The 29 th IEEE CSIC symposium 2007.
  • X. A. Fu , J. Dunning, C. A. Zorman, M. Mehregany, “Polycrystalline 3C-SiC thin films grown by LPCVD using dual precursors”, Sensors and Actuators, vol. 119, 169-176, 2005.
  • X. A. Fu , J. Dunning, C. A. Zorman, M. Mehregany, “Residual stress and Young's modulus of polycrystalline 3C-SiC films grown by LPCVD”, Thin Solid Films, vol. 492, 195-202, 2005.
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